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Title: Double-metal-gate nanocrystalline Si thin film transistors with flexible threshold voltage controllability

We fabricated nano-crystalline Si (nc-Si:H) thin-film transistors (TFTs) with a double-metal-gate structure, which showed a high electron-mobility (μ{sub FE}) and adjustable threshold voltages (V{sub th}). The nc-Si:H channel and source/drain (S/D) of the multilayered TFT were deposited at 375 °C by inductively coupled plasma chemical vapor deposition. The low grain-boundary defect density of the channel layer is responsible for the high μ{sub FE} of 370 cm{sup 2}/V-s, a steep subthreshold slope of 90 mV/decade, and a low V{sub th} of −0.64 V. When biased with the double-gate driving mode, the device shows a tunable V{sub th} value extending from −1 V up to 2.7 V.
Authors:
;  [1] ;  [2] ;  [3] ;  [2] ;  [1] ;  [3] ;  [4]
  1. Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan (China)
  2. National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China)
  3. (China)
  4. Departments of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan (China)
Publication Date:
OSTI Identifier:
22254059
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CRYSTALS; ELECTRIC POTENTIAL; ELECTRON MOBILITY; GRAIN BOUNDARIES; LAYERS; NANOSTRUCTURES; PLASMA; SOCIO-ECONOMIC FACTORS; THIN FILMS; TRANSISTORS