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Title: Surface transfer doping of diamond by MoO{sub 3}: A combined spectroscopic and Hall measurement study

Surface transfer doping of diamond has been demonstrated using MoO{sub 3} as a surface electron acceptor material. Synchrotron-based high resolution photoemission spectroscopy reveals that electrons are transferred from the diamond surface to MoO{sub 3}, leading to the formation of a sub-surface quasi 2-dimensional hole gas within the diamond. Ex-situ electrical characterization demonstrated an increase in hole carrier concentration from 1.00 × 10{sup 13}/cm{sup 2} for the air-exposed hydrogen-terminated diamond surface to 2.16 × 10{sup 13}/cm{sup 2} following MoO{sub 3} deposition. This demonstrates the potential to improve the stability and performance of hydrogen-terminated diamond electronic devices through the incorporation of high electron affinity transition metal oxides.
Authors:
; ;  [1] ;  [2] ;  [3] ;  [4] ;  [5]
  1. School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom)
  2. Department of Chemistry, National University of Singapore, Singapore 117543 (Singapore)
  3. Department of Physics, La Trobe University, Victoria 3086 (Australia)
  4. LSPM-CNRS, Université Paris 13, Villetaneuse 93430 (France)
  5. Department of Physics, National University of Singapore, Singapore 117542 (Singapore)
Publication Date:
OSTI Identifier:
22254055
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BINDING ENERGY; DIAMONDS; ELECTRONS; MOLYBDENUM OXIDES; PHOTOEMISSION; SURFACES; SYNCHROTRONS; TRANSITION ELEMENTS