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Title: High-mobility, air stable bottom-contact n-channel thin film transistors based on N,N′-ditridecyl perylene diimide

Bottom-gate bottom-contact (BGBC) organic thin film transistors (OTFTs) based on N,N′-ditridecyl perylene diimide exhibit electron mobility as high as 3.54 cm{sup 2} V{sup −1} s{sup −1} in nitrogen, higher than that (1 cm{sup 2} V{sup −1} s{sup −1}) of bottom-gate top-contact devices. The better performance of BGBC configuration in N{sub 2} is attributed to lower contact resistance, which is further reduced by thermal annealing. After thermally annealing the BGBC OTFTs at 180 °C, electron mobility as high as 3.5 cm{sup 2} V{sup −1} s{sup −1}, current on/off ratio of 10{sup 6} and threshold voltage of 9 V are achieved in air, and the mobility retains above 1 cm{sup 2} V{sup −1} s{sup −1} after storage for two months in air. Thermal treatment enhanced crystalline grains, reduced grain boundaries, and suppressed the adsorption of H{sub 2}O and O{sub 2}, leading to excellent performance in air.
Authors:
 [1] ;  [2] ; ; ;  [1] ;  [1] ;  [2]
  1. Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22254046
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ADSORPTION; AIR; ANNEALING; ELECTRIC POTENTIAL; ELECTRON MOBILITY; GRAIN BOUNDARIES; NITROGEN; PERFORMANCE; PERYLENE; THIN FILMS; TRANSISTORS