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Title: Photoluminescence properties of Mg-doped InN nanowires

In this work, photoluminescence (PL) properties of nearly defect-free Mg-doped InN nanowires were investigated in detail. The low-doped sample exhibits two PL emission peaks up to 152‚ÄČK, which can be ascribed to the band-to-band recombination and the Mg-acceptor energy level related recombination, respectively. For the high-doped sample, the Mg-acceptor energy level related transition dominates. Detailed power dependent PL studies further indicate that the Mg-acceptor energy level related PL emission is due to the donor-acceptor pair recombination process, which subsequently evolves into the free-to-acceptor recombination with increasing temperature.
Authors:
; ;  [1]
  1. Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9 (Canada)
Publication Date:
OSTI Identifier:
22254045
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DOPED MATERIALS; ENERGY LEVELS; INDIUM NITRIDES; PHOTOLUMINESCENCE; QUANTUM WIRES; RECOMBINATION