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Title: Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors

We report an experimental evidence that some hydrogens passivate electron traps in an amorphous oxide semiconductor, a-In-Ga-Zn-O (a-IGZO). The a-IGZO thin-film transistors (TFTs) annealed at 300 °C exhibit good operation characteristics; while those annealed at ≥400 °C show deteriorated ones. Thermal desorption spectra (TDS) of H{sub 2}O indicate that this threshold annealing temperature corresponds to depletion of H{sub 2}O desorption from the a-IGZO layer. Hydrogen re-doping by wet oxygen annealing recovers the good TFT characteristic. The hydrogens responsible for this passivation have specific binding energies corresponding to the desorption temperatures of 300–430 °C. A plausible structural model is suggested.
Authors:
;  [1] ;  [2] ; ;  [1] ;  [3] ;  [4] ;  [1] ;  [3] ;  [3]
  1. Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan)
  2. Frontier Research Center, Tokyo Institute of Technology, Yokohama (Japan)
  3. (Japan)
  4. Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama (Japan)
Publication Date:
OSTI Identifier:
22254044
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 36 MATERIALS SCIENCE; ANNEALING; BINDING ENERGY; DESORPTION; ELECTRONS; HYDROGEN; OXIDES; OXYGEN; PASSIVATION; SEMICONDUCTOR MATERIALS; THIN FILMS; TRANSISTORS; TRAPS; WATER