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Title: Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment

Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [5]
  1. ETH Zurich, Laser Spectroscopy and Sensing Lab, 8093 Zurich (Switzerland)
  2. (Switzerland)
  3. IEIIT-CNR, Torino 10129 (Italy)
  4. Phocone AG, 8005 Zurich (Switzerland)
  5. ETH Zurich (Switzerland)
Publication Date:
OSTI Identifier:
22254040
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CONFINEMENT; ETCHING; LEAD; LEAD SELENIDES; MOLECULAR BEAM EPITAXY; QUANTUM WELLS; REFRACTIVE INDEX; SEMICONDUCTOR MATERIALS; SUBSTRATES; TEMPERATURE DEPENDENCE