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Title: Lateral spin valves with two-different Heusler-alloy electrodes on the same platform

Using room-temperature molecular beam epitaxy on Si(111), we demonstrate Heusler-alloy bilayers consisting of L2{sub 1}-Co{sub 2}FeSi (CFS) and D0{sub 3}-Fe{sub 3}Si (FS). By fabricating lateral spin valves with L2{sub 1}-CFS and D0{sub 3}-FS electrodes, we can see ideal spin signals even though we use one L2{sub 1}-CFS as a spin injector and another D0{sub 3}-FS as a spin detector. The difference in the spin absorption between L2{sub 1}-CFS and D0{sub 3}-FS can also be examined, and we find that the spin resistance of D0{sub 3}-FS is larger than that of L2{sub 1}-CFS. This work will be useful for understanding spin transport in lateral spin-valve devices with different Heusler-alloy electrodes.
Authors:
; ; ; ; ;  [1]
  1. Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)
Publication Date:
OSTI Identifier:
22254031
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; ELECTRODES; HEUSLER ALLOYS; IRON SILICIDES; LAYERS; MOLECULAR BEAM EPITAXY; SIGNALS; SPIN; TEMPERATURE RANGE 0273-0400 K