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Title: Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO{sub 2}/SiO{sub 2} dielectric mirrors

We report a sub-250-nm, optically pumped, deep-ultraviolet laser using an Al{sub x}Ga{sub 1−x}N-based multi-quantum-well structure grown on a bulk Al-polar c-plane AlN substrate. TE-polarization-dominant lasing action was observed at room temperature with a threshold pumping power density of 250 kW/cm{sup 2}. After employing high-reflectivity SiO{sub 2}/HfO{sub 2} dielectric mirrors on both facets, the threshold pumping power density was further reduced to 180 kW/cm{sup 2}. The internal loss and threshold modal gain can be calculated as 2 cm{sup −1} and 10.9 cm{sup −1}, respectively.
Authors:
; ; ; ; ; ; ; ; ;  [1] ; ; ; ;  [2]
  1. School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Dr. NW, Atlanta, Georgia 30332-0250 (United States)
  2. Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States)
Publication Date:
OSTI Identifier:
22254025
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM NITRIDES; DIELECTRIC MATERIALS; HAFNIUM OXIDES; LANTHANUM SELENIDES; LASERS; POWER DENSITY; QUANTUM WELLS; SILICA; SILICON OXIDES; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; ULTRAVIOLET RADIATION