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Title: Encapsulated gate-all-around InAs nanowire field-effect transistors

We report the fabrication of lateral gate-all-around InAs nanowire field-effect transistors whose gate overlaps the source and drain electrodes and thus fully encapsulates the nanowire channel. They feature large drive current and transconductance that surpass those of conventional non-gate-overlap devices. The improved device characteristics can be attributed to the elimination of access resistance associated with ungated segments between the gate and source/drain electrodes. Our data also reveal a correlation between the normalized transconductance and the threshold voltage, which points to a beneficial effect of our wet-etching procedure performed prior to the atomic-layer-deposition of the gate dielectric.
Authors:
; ; ; ; ; ; ; ;  [1]
  1. NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198 (Japan)
Publication Date:
OSTI Identifier:
22254022
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CORRELATIONS; CURRENTS; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTRODES; EQUIPMENT; ETCHING; FABRICATION; FIELD EFFECT TRANSISTORS; INDIUM ARSENIDES