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Title: The effect of Ta doping in polycrystalline TiO{sub x} and the associated thin film transistor properties

Tantalum (Ta) is suggested to act as an electron donor and crystal phase stabilizer in titanium oxide (TiO{sub x}). A transition occurs from an amorphous state to a crystalline phase at an annealing temperature above 300 °C in a vacuum ambient. As the annealing temperature increases from 300 °C to 450 °C, the mobility increases drastically from 0.07 cm{sup 2}/Vs to 0.61 cm{sup 2}/Vs. The remarkable enhancement of thin film transistor performance is suggested to be due to the splitting of Ti 3d band orbitals as well as the increase in Ta{sup 5+} ions that can act as electron donors.
Authors:
; ;  [1] ;  [2]
  1. Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 133-791 (Korea, Republic of)
  2. Department of Physics, Dankook University, 119 Dandae-ro, Dongnam-gu, Cheonan 330-714 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22254021
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AMORPHOUS STATE; ANNEALING; BINDING ENERGY; ELECTRONS; MOBILITY; POLYCRYSTALS; TANTALUM; TANTALUM IONS; THIN FILMS; TITANIUM OXIDES; TRANSISTORS