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Title: Oxidation of step edges on vicinal 4H-SiC(0001) surfaces

The oxidation processes of stepped SiC(0001) surfaces are studied within the ab initio atomistic thermodynamics approach. Our calculations show that a one-dimensional -Si-O- chain structure as a precursor for oxide growth on stepped SiC surfaces is formed along the step edge, promoting further oxidation of the step edges. Following the modified Deal-Grove oxidation model, we also find that the oxidation rate at steps is higher than that at terraces by three orders of magnitude. These findings give a reasonable explanation for the oxide thickness fluctuation between the step and the terrace observed in the previous experiments.
Authors:
; ;  [1] ;  [2]
  1. School of Electronic Science and Technology, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024 (China)
  2. Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), College of Advanced Science and Technology, Ministry of Education, Dalian 116024 (China)
Publication Date:
OSTI Identifier:
22254018
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; FLUCTUATIONS; HYDROGEN 4; OXIDATION; OXIDES; PRECURSOR; SILICON CARBIDES; SURFACES; THERMODYNAMICS; THICKNESS