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Title: Heteroepitaxy of group IV-VI nitrides by atomic layer deposition

Heteroepitaxial growth of selected group IV-VI nitrides on various orientations of sapphire (α-Al{sub 2}O{sub 3}) is demonstrated using atomic layer deposition. High quality, epitaxial films are produced at significantly lower temperatures than required by conventional deposition methods. Characterization of electrical and superconducting properties of epitaxial films reveals a reduced room temperature resistivity and increased residual resistance ratio for films deposited on sapphire compared to polycrystalline samples deposited concurrently on fused quartz substrates.
Authors:
; ; ;  [1] ; ; ;  [1] ;  [2] ;  [1] ;  [2]
  1. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22254017
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; DEPOSITION; EPITAXY; FILMS; NITRIDES; ORIENTATION; POLYCRYSTALS; QUARTZ; SAPPHIRE; SUBSTRATES