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Title: p-type ZnS:N nanowires: Low-temperature solvothermal doping and optoelectronic properties

Nitrogen doped p-type ZnS nanowires (NWs) were realized using thermal decomposition of triethylamine at a mild temperature. Field-effect transistors made from individual ZnS:N NWs revealed typical p-type conductivity behavior, with a hole mobility of 3.41 cm{sup 2}V{sup −1}s{sup −1} and a hole concentration of 1.67 × 10{sup 17} cm{sup −3}, respectively. Further analysis found that the ZnS:N NW is sensitive to UV light irradiation with high responsivity, photoconductive gain, and good spectral selectivity. The totality of this study suggests that the solvothermal doping method is highly feasible to dope one dimensional semiconductor nanostructures for optoelectronic devices application.
Authors:
; ; ; ; ; ;  [1]
  1. School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei, Anhui 230009 (China)
Publication Date:
OSTI Identifier:
22254004
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; DOPED MATERIALS; FIELD EFFECT TRANSISTORS; IRRADIATION; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; ULTRAVIOLET RADIATION; ZINC SULFIDES