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Title: Multilevel and long retentive resistive switching in low temperature nanostructured Cu/SiO{sub x}-W-SiO{sub x}/Pt

Amorphous SiO{sub x}-based memory films are fabricated at room temperature, and study on their resistive switching characteristics and improvement approaches is performed. Multilevel resistive states with large ratio 1: ∼10{sup 2}: 3 × 10{sup 5} and long retention exceeding 2 × 10{sup 6} s at ambient temperature and humidity are observed in Cu/SiO{sub x} (9 nm)-W (∼2 nm)-SiO{sub x} (9 nm)/Pt ultrathin stack. Nonvolatile switching is consistently realized in microscopy. Based on investigations of microscopic conduction and microstructure, tungsten incorporation with copper as relay bridges for conducting filaments is proposed to attribute to the performance improvement and the multilevel switching mechanism.
Authors:
; ; ; ;  [1] ; ; ;  [2] ;  [3]
  1. School of Materials, Ningbo University of Technology, Ningbo 315211 (China)
  2. Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)
  3. (China)
Publication Date:
OSTI Identifier:
22254000
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; AMBIENT TEMPERATURE; COPPER; FILAMENTS; FILMS; MICROSCOPY; MICROSTRUCTURE; NANOSTRUCTURES; SILICON OXIDES; TEMPERATURE RANGE 0273-0400 K; TUNGSTEN