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Title: High spin polarization at room temperature in Ge-substituted Fe{sub 3}O{sub 4} epitaxial thin film grown under high oxygen pressure

Epitaxial thin films of room-temperature ferrimagnetic (Fe,Ge){sub 3}O{sub 4} were fabricated using pulsed laser deposition. Films with a single-phase spinel structure were grown under high oxygen pressures (0.01–0.6 Pa). The carrier transport across (Fe,Ge){sub 3}O{sub 4}/Nb:SrTiO{sub 3} interface was studied to estimate the spin polarization of (Fe, Ge){sub 3}O{sub 4}. Current–voltage curves of Fe{sub 2.8}Ge{sub 0.2}O{sub 4}/Nb:SrTiO{sub 3} junction showed rectifying behavior even at 300 K whereas Fe{sub 3}O{sub 4}/Nb:SrTiO{sub 3} junction showed ohmic behavior. Calculations based on a model for a Schottky contact with a ferromagnetic component yielded a spin polarization of 0.50 at 300 K for Fe{sub 2.8}Ge{sub 0.2}O{sub 4}, indicating its potential as a promising spin injector.
Authors:
; ; ; ;  [1]
  1. Department of Electrical Engineering and Information Systems, Graduate School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)
Publication Date:
OSTI Identifier:
22253999
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ENERGY BEAM DEPOSITION; FERRITES; INTERFACES; IRON OXIDES; OXYGEN; PULSED IRRADIATION; SEMICONDUCTOR JUNCTIONS; SPIN ORIENTATION; STRONTIUM TITANATES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS