Electron effective mass in Al{sub 0.72}Ga{sub 0.28}N alloys determined by mid-infrared optical Hall effect

Kühne, P.; Hofmann, T.; Schubert, M.; Nilsson, D.; Kakanakova-Georgieva, A.; Janzén, E.; Darakchieva, V.

doi:10.1063/1.4833195

Title: Electron effective mass in Al{sub 0.72}Ga{sub 0.28}N alloys determined by mid-infrared optical Hall effect

Full Record
Other Related Research

Abstract

The effective electron mass parameter in Si-doped Al{sub 0.72}Ga{sub 0.28}N is determined to be m{sup ∗}=(0.336±0.020) m{sub 0} from mid-infrared optical Hall effect measurements. No significant anisotropy of the effective electron mass parameter is found supporting theoretical predictions. Assuming a linear change of the effective electron mass with the Al content in AlGaN alloys and m{sup ∗}=0.232 m{sub 0} for GaN, an average effective electron mass of m{sup ∗}=0.376 m{sub 0} can be extrapolated for AlN. The analysis of mid-infrared spectroscopic ellipsometry measurements further confirms the two phonon mode behavior of the E{sub 1}(TO) and one phonon mode behavior of the A{sub 1}(LO) phonon mode in high-Al-content AlGaN alloys as seen in previous Raman scattering studies.

Authors:

Kühne, P.; Hofmann, T.; Schubert, M. ^[1]; Nilsson, D.; Kakanakova-Georgieva, A.; Janzén, E.; Darakchieva, V. ^[2]

Department of Electrical Engineering and CNFM, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588-0511 (United States)
Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, 581 83 (Sweden)

Publication Date:: Mon Nov 18 00:00:00 EST 2013

OSTI Identifier:: 22253998

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 103; Journal Issue: 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALLOYS; ALUMINIUM NITRIDES; DOPED MATERIALS; EFFECTIVE MASS; ELECTRONS; ELLIPSOMETRY; GALLIUM NITRIDES; HALL EFFECT; PHONONS

Citation Formats


                    Schöche, S., E-mail: schoeche@huskers.unl.edu, Kühne, P., Hofmann, T., Schubert, M., Nilsson, D., Kakanakova-Georgieva, A., Janzén, E., and Darakchieva, V. Electron effective mass in Al{sub 0.72}Ga{sub 0.28}N alloys determined by mid-infrared optical Hall effect.  United States: N. p., 2013. 
        Web.  doi:10.1063/1.4833195.

Copy to clipboard


                    Schöche, S., E-mail: schoeche@huskers.unl.edu, Kühne, P., Hofmann, T., Schubert, M., Nilsson, D., Kakanakova-Georgieva, A., Janzén, E., & Darakchieva, V. Electron effective mass in Al{sub 0.72}Ga{sub 0.28}N alloys determined by mid-infrared optical Hall effect.  United States.  https://doi.org/10.1063/1.4833195

Copy to clipboard


                    Schöche, S., E-mail: schoeche@huskers.unl.edu, Kühne, P., Hofmann, T., Schubert, M., Nilsson, D., Kakanakova-Georgieva, A., Janzén, E., and Darakchieva, V. 2013.  
        "Electron effective mass in Al{sub 0.72}Ga{sub 0.28}N alloys determined by mid-infrared optical Hall effect".  United States.  https://doi.org/10.1063/1.4833195.

Copy to clipboard


                    
@article{osti_22253998,

  title        = {Electron effective mass in Al{sub 0.72}Ga{sub 0.28}N alloys determined by mid-infrared optical Hall effect},

  author       = {Schöche, S., E-mail: schoeche@huskers.unl.edu and Kühne, P. and Hofmann, T. and Schubert, M. and Nilsson, D. and Kakanakova-Georgieva, A. and Janzén, E. and Darakchieva, V.},

  abstractNote = {The effective electron mass parameter in Si-doped Al{sub 0.72}Ga{sub 0.28}N is determined to be m{sup ∗}=(0.336±0.020) m{sub 0} from mid-infrared optical Hall effect measurements. No significant anisotropy of the effective electron mass parameter is found supporting theoretical predictions. Assuming a linear change of the effective electron mass with the Al content in AlGaN alloys and m{sup ∗}=0.232 m{sub 0} for GaN, an average effective electron mass of m{sup ∗}=0.376 m{sub 0} can be extrapolated for AlN. The analysis of mid-infrared spectroscopic ellipsometry measurements further confirms the two phonon mode behavior of the E{sub 1}(TO) and one phonon mode behavior of the A{sub 1}(LO) phonon mode in high-Al-content AlGaN alloys as seen in previous Raman scattering studies.},

  doi          = {10.1063/1.4833195},

  url          = {https://www.osti.gov/biblio/22253998},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 21,

  volume       = 103,

  place        = {United States},

  year         = {Mon Nov 18 00:00:00 EST 2013},

  month        = {Mon Nov 18 00:00:00 EST 2013}

}

Copy to clipboard

Journal Article:

https://doi.org/10.1063/1.4833195

Other availability

Find in Google Scholar

Search WorldCat to find libraries that may hold this journal

Save / Share:

Export Metadata

Save to My Library

Similar records in OSTI.GOV collections:

[Zr{sub 0.72}Y{sub 0.28}]Al{sub 4}C{sub 4}: A new member of the homologous series (MC){sub l}(T{sub 4}C{sub 3}){sub m} (M=Zr, Y and Hf, T=Al, Si and Ge)

Journal Article Sugiura, Keita; Iwata, Tomoyuki; Nakano, Hiromi; ... - Journal of Solid State Chemistry

A new layered carbide, [Zr{sub 0.72(3)}Y{sub 0.28(3)}]Al{sub 4}C{sub 4}, has been synthesized and characterized by X-ray powder diffraction, transmission electron microscopy and energy dispersive X-ray spectroscopy (EDX). The atom ratios [Zr:Y] were determined by EDX, and the initial structure model was derived by the direct methods, and further refined by Rietveld method. The crystal is trigonal (space group P3-barm1, Z=1) with lattice dimensions of a=0.333990(5) nm, c=1.09942(1) nm and V=0.106209(2) nm{sup 3}. This compound shows an intergrowth structure with [Zr{sub 0.72}Y{sub 0.28}C{sub 2}] thin slabs separated by Al{sub 4}C{sub 3}-type [Al{sub 4}C{sub 4}] layers. It is a new member withmore »« less
https://doi.org/10.1016/j.jssc.2009.04.007
Calculated temperature rise in midinfrared laser irradiated Hg{sub 0.72}Cd{sub 0.28}Te

Journal Article Storeboe, Asta; Brudevoll, Trond; Stenersen, Knut - Journal of Applied Physics

We present results from a numerical study on heating in a 10 {mu}m thick layer of Hg{sub 0.72}Cd{sub 0.28}Te induced by 1 {mu}s long laser pulses at photon energies close to the band gap of the material. A number of highly nonlinear mechanisms contribute to the heating, their relative importance being dependent on laser wavelength, instantaneous irradiance, and material temperature. Mechanisms studied include one- and two-photon absorptions across the band gap, intervalence band absorption between light- and heavy hole bands, electron-hole recombination, free-carrier absorption, excess carrier temperatures, and refractive index changes. The increase in band gap with temperature eventually terminatesmore »« less
https://doi.org/10.1063/1.2890751
In-field Conductivity Fluctuations in Ba{sub 0.72}K{sub 0.28}Fe{sub 2}As{sub 2} Single Crystals

Journal Article Wang, X. - Journal of Superconductivity and Novel Magnetism

Fluctuations in the conductivity of Ba{sub 0.72}K{sub 0.28}Fe{sub 2}As{sub 2} single crystal are studied systematically by resistance measurements as a function of temperature and magnetic field. A clear Maki−Thompson and Aslamakov−Larkin (MT–AL) two- to three-dimensional (2D–3D) crossover is found on the excess conductivity (Δσ) curves as the temperature approaches the superconducting critical temperature, T{sub c}. 3D fluctuations in superconductivity are realized near T{sub c} that are well fitted to experimental data by the 3D Aslamazov–Larkin theory. The Maki–Thompson model shows a 2D conductivity fluctuation above the 2D-3D temperature transition, T{sub 0}, which depends on magnetic field. Results show that themore »« less
https://doi.org/10.1007/S10948-017-4522-6
Increasing the mobility and power-electronics figure of merit of AlGaN with atomically thin AlN/GaN digital-alloy superlattices

Journal Article Pant, Nick; Lee, Woncheol; Sanders, Nocona; ... - Applied Physics Letters

Alloy scattering in random AlGaN alloys drastically reduces the electron mobility and, therefore, the power-electronics figure of merit. As a result, Al compositions greater than 75% are required to obtain even a twofold increase in the Baliga figure of merit compared to GaN. However, beyond approximately 80% Al composition, donors in AlGaN undergo the DX transition, which makes impurity doping increasingly more difficult. Moreover, the contact resistance increases exponentially with the increase in Al content, and integration with dielectrics becomes difficult due to the upward shift of the conduction band. Atomically thin superlattices of AlN and GaN, also known asmore »« less
https://doi.org/10.1063/5.0097963

Full Text Available
Complex and incommensurate ordering in Al{sub 0.72}Ga{sub 0.28}N thin films grown by plasma-assisted molecular beam epitaxy

Journal Article Yiyi, Wang; Oezcan, Ahmet; Ludwig, Jr, Karl; ... - Applied Physics Letters

Structures with incommensurate ordering along the [0001] direction are observed in wurtzite Al{sub 0.72}Ga{sub 0.28}N alloys grown by plasma-assisted molecular beam epitaxy on c-plane sapphire. Films grown in environments with group-III/N ratios greater than 1 exhibit ordered superlattice structures that are incommensurate with the wurtzite crystal lattice. In contrast, films grown under nitrogen-rich conditions exhibit ordered structures with a periodicity of four cation-N monolayers. The increasing complexity of the ordering with increasing Ga-rich growth environment suggests that the ordering is related to the presence of a Ga overlayer believed to exist on the surface of the growing film.
https://doi.org/10.1063/1.2201898

Similar Records