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Title: Electron effective mass in Al{sub 0.72}Ga{sub 0.28}N alloys determined by mid-infrared optical Hall effect

The effective electron mass parameter in Si-doped Al{sub 0.72}Ga{sub 0.28}N is determined to be m{sup ∗}=(0.336±0.020) m{sub 0} from mid-infrared optical Hall effect measurements. No significant anisotropy of the effective electron mass parameter is found supporting theoretical predictions. Assuming a linear change of the effective electron mass with the Al content in AlGaN alloys and m{sup ∗}=0.232 m{sub 0} for GaN, an average effective electron mass of m{sup ∗}=0.376 m{sub 0} can be extrapolated for AlN. The analysis of mid-infrared spectroscopic ellipsometry measurements further confirms the two phonon mode behavior of the E{sub 1}(TO) and one phonon mode behavior of the A{sub 1}(LO) phonon mode in high-Al-content AlGaN alloys as seen in previous Raman scattering studies.
Authors:
; ; ;  [1] ; ; ; ;  [2]
  1. Department of Electrical Engineering and CNFM, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588-0511 (United States)
  2. Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, 581 83 (Sweden)
Publication Date:
OSTI Identifier:
22253998
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALLOYS; ALUMINIUM NITRIDES; DOPED MATERIALS; EFFECTIVE MASS; ELECTRONS; ELLIPSOMETRY; GALLIUM NITRIDES; HALL EFFECT; PHONONS