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Title: Synthesis of SiO{sub 2}/β-SiC/graphite hybrid composite by low temperature hot filament chemical vapor deposition

β-SiC thin films were synthesized directly on graphite by hot filament chemical vapor deposition at low temperature. SiH{sub 4} diluted in hydrogen was employed as the silicon source, while graphite was functioned as both substrate and carbon source for the as-grown β-SiC films. X-ray diffraction and Fourier transform infrared analysis indicate that SiO{sub 2}/β-SiC/graphite hybrid composite was formed after post annealing treatment, and its crystalline quality can be remarkably improved under optimized annealing conditions. The possible growth mechanism was proposed based on in situ etching of graphite by reactive hydrogen radicals at the atomic level.
Authors:
; ; ; ;  [1] ;  [1] ;  [2] ;  [3] ;  [1] ;  [2]
  1. School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China)
  2. (China)
  3. New Energy Source Research Center of Shenyang Institute of Engineering, Shengyang 110136 (China)
Publication Date:
OSTI Identifier:
22253996
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CHEMICAL VAPOR DEPOSITION; FILAMENTS; GRAPHITE; SILICA; SILICON CARBIDES; SILICON OXIDES; THIN FILMS; X-RAY DIFFRACTION