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Title: Epitaxial lift-off of quantum dot enhanced GaAs single junction solar cells

InAs/GaAs strain-balanced quantum dot (QD) n-i-p solar cells were fabricated by epitaxial lift-off (ELO), creating thin and flexible devices that exhibit an enhanced sub-GaAs bandgap current collection extending into the near infrared. Materials and optical analysis indicates that QD quality after ELO processing is preserved, which is supported by transmission electron microscopy images of the QD superlattice post-ELO. Spectral responsivity measurements depict a broadband resonant cavity enhancement past the GaAs bandedge, which is due to the thinning of the device. Integrated external quantum efficiency shows a QD contribution to the short circuit current density of 0.23 mA/cm{sup 2}.
Authors:
; ; ;  [1] ; ; ; ;  [2] ;  [3]
  1. Rochester Institute of Technology, Rochester, New York 14623 (United States)
  2. MicroLink Devices, Inc., Niles, Illinois 60714 (United States)
  3. South Dakota School of Mines and Technology, Rapid City, South Dakota 57701 (United States)
Publication Date:
OSTI Identifier:
22253987
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; CURRENT DENSITY; ELECTRIC CONTACTS; EPITAXY; GALLIUM ARSENIDES; INDIUM ARSENIDES; QUANTUM DOTS; QUANTUM EFFICIENCY; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS; TRANSMISSION ELECTRON MICROSCOPY