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Title: Conductance modulation in topological insulator Bi{sub 2}Se{sub 3} thin films with ionic liquid gating

A Bi{sub 2}Se{sub 3} topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365% at room temperature. We discuss the role of charged impurities on the transport properties. The conductance modulation with gate bias is due to a change in the carrier concentration, whereas the temperature dependent conductance change is originated from a change in mobility. Large conductance modulation at room temperature along with the transparent optical properties makes topological insulators as an interesting (opto)electronic material.
Authors:
; ;  [1] ; ; ;  [2] ;  [3] ;  [4] ;  [5]
  1. Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore)
  2. Department of Physics and Astronomy, Rutgers, The State University of New Jersey, 136 Frelinghuysen Road, Piscataway, New Jersey 08854 (United States)
  3. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)
  4. (Korea, Republic of)
  5. School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22253985
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BISMUTH SELENIDES; CONCENTRATION RATIO; FIELD EFFECT TRANSISTORS; IMPURITIES; LIQUIDS; MOBILITY; MODULATION; MOLTEN SALTS; OPTICAL PROPERTIES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TOPOLOGY