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Title: Polarization doping and the efficiency of III-nitride optoelectronic devices

The intrinsic polarization is generally considered a nuisance in III-nitride devices, but recent studies have shown that it can be used to enhance p- and n-type conductivity and even to replace impurity doping. We show by numerical simulations that polarization-doped light-emitting diode (LED) structures have a significant performance advantage over conventional impurity-doped LED structures. Our results indicate that polarization doping decreases electric fields inside the active region and potential barriers in the depletion region, as well as the magnitude of the quantum-confined Stark effect. The simulations also predict at least an order of magnitude increase in the current density corresponding to the maximum efficiency (i.e., smaller droop) as compared to impurity-doped structures. The obtained high doping concentrations could also enable, e.g., fabrication of III-N resonant tunneling diodes and improved ohmic contacts.
Authors:
; ;  [1]
  1. Department of Biomedical Engineering and Computational Science, Aalto University, P.O. Box 12200, FI-00076 Aalto (Finland)
Publication Date:
OSTI Identifier:
22253980
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COMPUTERIZED SIMULATION; DOPED MATERIALS; FABRICATION; LIGHT EMITTING DIODES; POLARIZATION; TUNNEL DIODES