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Title: Atomistic full-band simulations of monolayer MoS{sub 2} transistors

We study the transport properties of deeply scaled monolayer MoS{sub 2} n-channel metal-oxide-semiconductor field effect transistors (MOSFETs), using full-band ballistic quantum transport simulations, with an atomistic tight-binding Hamiltonian obtained from density functional theory. Our simulations suggest that monolayer MoS{sub 2} MOSFETs can provide near-ideal subthreshold slope, suppression of drain-induced barrier lowering, and gate-induced drain leakage. However, these full-band simulations exhibit limited transconductance. These ballistic simulations also exhibit negative differential resistance (NDR) in the output characteristics associated with the narrow width in energy of the lowest conduction band, but this NDR may be substantially reduced or eliminated by scattering in MoS{sub 2}.
Authors:
; ;  [1]
  1. Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States)
Publication Date:
OSTI Identifier:
22253967
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DENSITY FUNCTIONAL METHOD; HAMILTONIANS; MOLYBDENUM SULFIDES; MOSFET; OXIDES; SEMICONDUCTOR MATERIALS; SIMULATION