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Title: Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5‚ÄČeV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.
Authors:
; ;  [1] ; ; ; ;  [2]
  1. Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States)
  2. Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)
Publication Date:
OSTI Identifier:
22253966
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DIFFUSION BARRIERS; ELECTRON MOBILITY; ELECTRON SPECTROSCOPY; ELECTRONS; ENERGY LEVELS; GALLIUM NITRIDES; TRANSISTORS; TRAPS