Quantum dot Ge/TiO{sub 2} heterojunction photoconductor fabrication and performance
Abstract
Spun cast TiO{sub 2}-Ge quantum dot (QD) heterojunction type photodetectors have been fabricated and characterized, with interest paid to photocurrent enhancements related to device design. Performance as a function of absorber layer thickness, QD size, and back contact is investigated. We have achieved ultra-thin (∼200 nm) devices with photocurrents at 0.5 V of 10{sup −4} A cm{sup −2} while the thickest devices have photocurrents at 0.5 V of 10{sup −2} A cm{sup −2} with on-off ratios >100, which represents 5 orders of magnitude increase in photocurrents over previously fabricated Ge QD devices. At 0.5 V bias, the currents in our devices are competitive with thin-film Ge photovoltaics.
- Authors:
-
- Department of Chemistry, University of California Davis, Davis, California 95616 (United States)
- Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Science and Technology, Taiyuan, Shanxi 030024 (China)
- Publication Date:
- OSTI Identifier:
- 22253965
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 103; Journal Issue: 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; EQUIPMENT; FABRICATION; HETEROJUNCTIONS; PERFORMANCE; PHOTOCURRENTS; PHOTODETECTORS; PHOTOVOLTAIC EFFECT; QUANTUM DOTS; THICKNESS; THIN FILMS; TITANIUM OXIDES
Citation Formats
Church, Carena P., Carter, Sue A., E-mail: sacarter@ucsc.edu, Muthuswamy, Elayaraja, Kauzlarich, Susan M., and Zhai, Guangmei. Quantum dot Ge/TiO{sub 2} heterojunction photoconductor fabrication and performance. United States: N. p., 2013.
Web. doi:10.1063/1.4826916.
Church, Carena P., Carter, Sue A., E-mail: sacarter@ucsc.edu, Muthuswamy, Elayaraja, Kauzlarich, Susan M., & Zhai, Guangmei. Quantum dot Ge/TiO{sub 2} heterojunction photoconductor fabrication and performance. United States. https://doi.org/10.1063/1.4826916
Church, Carena P., Carter, Sue A., E-mail: sacarter@ucsc.edu, Muthuswamy, Elayaraja, Kauzlarich, Susan M., and Zhai, Guangmei. 2013.
"Quantum dot Ge/TiO{sub 2} heterojunction photoconductor fabrication and performance". United States. https://doi.org/10.1063/1.4826916.
@article{osti_22253965,
title = {Quantum dot Ge/TiO{sub 2} heterojunction photoconductor fabrication and performance},
author = {Church, Carena P. and Carter, Sue A., E-mail: sacarter@ucsc.edu and Muthuswamy, Elayaraja and Kauzlarich, Susan M. and Zhai, Guangmei},
abstractNote = {Spun cast TiO{sub 2}-Ge quantum dot (QD) heterojunction type photodetectors have been fabricated and characterized, with interest paid to photocurrent enhancements related to device design. Performance as a function of absorber layer thickness, QD size, and back contact is investigated. We have achieved ultra-thin (∼200 nm) devices with photocurrents at 0.5 V of 10{sup −4} A cm{sup −2} while the thickest devices have photocurrents at 0.5 V of 10{sup −2} A cm{sup −2} with on-off ratios >100, which represents 5 orders of magnitude increase in photocurrents over previously fabricated Ge QD devices. At 0.5 V bias, the currents in our devices are competitive with thin-film Ge photovoltaics.},
doi = {10.1063/1.4826916},
url = {https://www.osti.gov/biblio/22253965},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 22,
volume = 103,
place = {United States},
year = {Mon Nov 25 00:00:00 EST 2013},
month = {Mon Nov 25 00:00:00 EST 2013}
}
Other availability
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.