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Title: Quantum dot Ge/TiO{sub 2} heterojunction photoconductor fabrication and performance

Abstract

Spun cast TiO{sub 2}-Ge quantum dot (QD) heterojunction type photodetectors have been fabricated and characterized, with interest paid to photocurrent enhancements related to device design. Performance as a function of absorber layer thickness, QD size, and back contact is investigated. We have achieved ultra-thin (∼200 nm) devices with photocurrents at 0.5 V of 10{sup −4} A cm{sup −2} while the thickest devices have photocurrents at 0.5 V of 10{sup −2} A cm{sup −2} with on-off ratios >100, which represents 5 orders of magnitude increase in photocurrents over previously fabricated Ge QD devices. At 0.5 V bias, the currents in our devices are competitive with thin-film Ge photovoltaics.

Authors:
; ;  [1];  [2]
  1. Department of Chemistry, University of California Davis, Davis, California 95616 (United States)
  2. Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Science and Technology, Taiyuan, Shanxi 030024 (China)
Publication Date:
OSTI Identifier:
22253965
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 103; Journal Issue: 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; EQUIPMENT; FABRICATION; HETEROJUNCTIONS; PERFORMANCE; PHOTOCURRENTS; PHOTODETECTORS; PHOTOVOLTAIC EFFECT; QUANTUM DOTS; THICKNESS; THIN FILMS; TITANIUM OXIDES

Citation Formats

Church, Carena P., Carter, Sue A., E-mail: sacarter@ucsc.edu, Muthuswamy, Elayaraja, Kauzlarich, Susan M., and Zhai, Guangmei. Quantum dot Ge/TiO{sub 2} heterojunction photoconductor fabrication and performance. United States: N. p., 2013. Web. doi:10.1063/1.4826916.
Church, Carena P., Carter, Sue A., E-mail: sacarter@ucsc.edu, Muthuswamy, Elayaraja, Kauzlarich, Susan M., & Zhai, Guangmei. Quantum dot Ge/TiO{sub 2} heterojunction photoconductor fabrication and performance. United States. https://doi.org/10.1063/1.4826916
Church, Carena P., Carter, Sue A., E-mail: sacarter@ucsc.edu, Muthuswamy, Elayaraja, Kauzlarich, Susan M., and Zhai, Guangmei. 2013. "Quantum dot Ge/TiO{sub 2} heterojunction photoconductor fabrication and performance". United States. https://doi.org/10.1063/1.4826916.
@article{osti_22253965,
title = {Quantum dot Ge/TiO{sub 2} heterojunction photoconductor fabrication and performance},
author = {Church, Carena P. and Carter, Sue A., E-mail: sacarter@ucsc.edu and Muthuswamy, Elayaraja and Kauzlarich, Susan M. and Zhai, Guangmei},
abstractNote = {Spun cast TiO{sub 2}-Ge quantum dot (QD) heterojunction type photodetectors have been fabricated and characterized, with interest paid to photocurrent enhancements related to device design. Performance as a function of absorber layer thickness, QD size, and back contact is investigated. We have achieved ultra-thin (∼200 nm) devices with photocurrents at 0.5 V of 10{sup −4} A cm{sup −2} while the thickest devices have photocurrents at 0.5 V of 10{sup −2} A cm{sup −2} with on-off ratios >100, which represents 5 orders of magnitude increase in photocurrents over previously fabricated Ge QD devices. At 0.5 V bias, the currents in our devices are competitive with thin-film Ge photovoltaics.},
doi = {10.1063/1.4826916},
url = {https://www.osti.gov/biblio/22253965}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 22,
volume = 103,
place = {United States},
year = {Mon Nov 25 00:00:00 EST 2013},
month = {Mon Nov 25 00:00:00 EST 2013}
}