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Title: Multi-channel conduction in redox-based resistive switch modelled using quantum point contact theory

A simple analytic model for the electron transport through filamentary-type structures in Si-rich silica (SiO{sub x})-based resistive switches is proposed. The model is based on a mesoscopic description and is able to account for the linear and nonlinear components of conductance that arise from both fully and partially formed conductive channels spanning the dielectric film. Channels are represented by arrays of identical scatterers whose number and quantum transmission properties determine the current magnitude in the low and high resistance states. We show that the proposed model not only reproduces the experimental current-voltage (I-V) characteristics but also the normalized differential conductance (dln(I)/dln(V)-V) curves of devices under test.
Authors:
;  [1] ; ;  [2]
  1. Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193 Cerdanyola del Vallés, Barcelona (Spain)
  2. Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE (United Kingdom)
Publication Date:
OSTI Identifier:
22253959
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; DIELECTRIC MATERIALS; ELECTRIC CONTACTS; SILICA; SWITCHES; TRANSMISSION