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Title: GaN nanorod light emitting diodes with suspended graphene transparent electrodes grown by rapid chemical vapor deposition

Ordered and dense GaN light emitting nanorods are studied with polycrystalline graphene grown by rapid chemical vapor deposition as suspended transparent electrodes. As the substitute of indium tin oxide, the graphene avoids complex processing to fill up the gaps between nanorods and subsequent surface flattening and offers high conductivity to improve the carrier injection. The as-fabricated devices have 32% improvement in light output power compared to conventional planar GaN-graphene diodes. The suspended graphene remains electrically stable up to 300 °C in air. The graphene can be obtained at low cost and high efficiency, indicating its high potential in future applications.
Authors:
; ; ; ; ; ; ; ;  [1] ;  [2] ;  [1] ;  [3]
  1. Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China)
  2. State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083 (China)
  3. (Sweden)
Publication Date:
OSTI Identifier:
22253955
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDES; GRAPHENE; LIGHT EMITTING DIODES; NANOSTRUCTURES; TIN OXIDES