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Title: Strong carrier localization and diminished quantum-confined Stark effect in ultra-thin high-indium-content InGaN quantum wells with violet light emission

Here, we report on the optical and structural characteristics of violet-light-emitting, ultra-thin, high-Indium-content (UTHI) InGaN/GaN multiple quantum wells (MQWs), and of conventional low-In-content MQWs, which both emit at similar emission energies though having different well thicknesses and In compositions. The spatial inhomogeneity of In content, and the potential fluctuation in high-efficiency UTHI MQWs were compared to those in the conventional low-In-content MQWs. We conclude that the UTHI InGaN MQWs are a promising structure for achieving better quantum efficiency in the visible and near-ultraviolet spectral range, owing to their strong carrier localization and reduced quantum-confined Stark effect.
Authors:
; ; ; ;  [1] ;  [2] ;  [3] ; ;  [2] ;  [4]
  1. Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of)
  2. Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of)
  3. (Korea, Republic of)
  4. Nanophysics and Semiconductors, CEA-CNRS-UJF Group, Institut NĂ©el, CNRS Grenoble, 25 rue des Martyrs, 38042 Grenoble Cedex 9 (France)
Publication Date:
OSTI Identifier:
22253954
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIERS; EMISSION; GALLIUM NITRIDES; INDIUM; QUANTUM EFFICIENCY; QUANTUM WELLS; STARK EFFECT; THICKNESS; VISIBLE RADIATION