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Title: The role of polarization fields in Auger-induced efficiency droop in nitride-based light-emitting diodes

The rates of non-radiative Auger recombination (AR) and radiative recombination (RR) in polar GaN/AlN quantum wells (QWs) are calculated. It is shown that in these QWs the polarization field not only suppresses the RR but also strongly enhances the rate of AR. As a result, the polarization field triggers the Auger-induced efficiency droop, which, according to the calculations, does not exist in non-polar GaN/AlN QWs. We demonstrate that in polar QWs the droop can be overcome by suppression of AR using a gradual variation of the QW layer composition, which compensates the effect of the electric field acting on holes.
Authors:
;  [1] ;  [2] ;  [3]
  1. Technion - Israel Institute of Technology, Haifa 32000 (Israel)
  2. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)
  3. Naval Research Laboratory, Washington, DC 20375 (United States)
Publication Date:
OSTI Identifier:
22253943
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM NITRIDES; EFFICIENCY; ELECTRIC FIELDS; GALLIUM NITRIDES; HOLES; LIGHT EMITTING DIODES; POLARIZATION; QUANTUM WELLS; RECOMBINATION