The role of polarization fields in Auger-induced efficiency droop in nitride-based light-emitting diodes

Journal Article · Mon Nov 25 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4833915· OSTI ID:22253943

Vaxenburg, Roman; Lifshitz, Efrat ^[1]; Rodina, Anna ^[2]

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1. Technion - Israel Institute of Technology, Haifa 32000 (Israel)
2. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)

The rates of non-radiative Auger recombination (AR) and radiative recombination (RR) in polar GaN/AlN quantum wells (QWs) are calculated. It is shown that in these QWs the polarization field not only suppresses the RR but also strongly enhances the rate of AR. As a result, the polarization field triggers the Auger-induced efficiency droop, which, according to the calculations, does not exist in non-polar GaN/AlN QWs. We demonstrate that in polar QWs the droop can be overcome by suppression of AR using a gradual variation of the QW layer composition, which compensates the effect of the electric field acting on holes.

• OSTI ID: 22253943
• Journal Information: Applied Physics Letters, Vol. 103, Issue 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM NITRIDES
EFFICIENCY
ELECTRIC FIELDS
GALLIUM NITRIDES
HOLES
LIGHT EMITTING DIODES
POLARIZATION
QUANTUM WELLS
RECOMBINATION