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Title: Investigations on correlation between I–V characteristic and internal quantum efficiency of blue (AlGaIn)N light-emitting diodes

We have studied the electrical and optical characteristics of (AlGaIn)N multiple quantum well light-emitting diodes. Minimizing contact effects by utilizing platinum as p-contact metal, ideality factors as low as 1.1 have been achieved. In agreement with basic semiconductor theory, a correlation between ideality factor and small-current efficiency was found. We were able to emulate the experimental current-voltage characteristic over seven orders of magnitude utilizing a two diode model. This model enables a very good prediction of internal quantum efficiency at moderate current densities out of purely electrically derived parameters.
Authors:
; ; ; ; ;  [1] ;  [2]
  1. OSRAM Opto Semiconductors GmbH, Leibnizstraße 4, 93055 Regensburg (Germany)
  2. Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastraße 72, 79108 Freiburg (Germany)
Publication Date:
OSTI Identifier:
22253942
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CORRELATIONS; CURRENT DENSITY; ELECTRIC POTENTIAL; LIGHT EMITTING DIODES; PLATINUM; QUANTUM EFFICIENCY; QUANTUM WELLS; SEMICONDUCTOR MATERIALS