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Title: Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence

We present an investigation of the degradation of InGaN/GaN laser diodes grown on a GaN substrate. The results indicate that: (i) Ageing induces a significant increase in the threshold current (Ith) of the lasers, which is attributed to an increase in non-radiative recombination; (ii) Ith increase is correlated to a decrease in the micro-cathodoluminescence signal measured (after the removal of the top metallization) in the region under the ridge; (iii) micro-photoluminescence measurements indicate that constant current stress increases non-radiative recombination within the quantum wells (and not only within the barriers), and induces an increase in the emission wavelength of the degraded region.
Authors:
; ; ; ;  [1] ;  [2] ; ;  [3] ; ; ;  [4] ; ;  [5] ;  [4] ;  [6]
  1. Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova (Italy)
  2. University of Cagliari, Piazza d'Armi, 09123 Cagliari (Italy)
  3. IMEM-National Council of Research, Parco Area delle Scienze 37/A, 43124 Parma (Italy)
  4. Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany)
  5. IMTEK, Freiburg University, Georges-Köhler-Allee 103 D, 79110 Freiburg (Germany)
  6. (Germany)
Publication Date:
OSTI Identifier:
22253932
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AGING; CATHODOLUMINESCENCE; GALLIUM NITRIDES; LASERS; PHOTOLUMINESCENCE; QUANTUM WELLS; REMOVAL; SIGNALS; STRESSES; SUBSTRATES; THRESHOLD CURRENT