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Title: Investigation of electromigration in In{sub 2}Se{sub 3} nanowire for phase change memory devices

The decomposition of In{sub 2}Se{sub 3} nanowire phase change memory devices during current-driving operation was investigated. The devices were subjected to thermal/electrical stress with current density and electric field during the reset operation at 0.24–0.38 MA/cm{sup 2} and 5.3–6.4 kV/cm, respectively. After multiple operation cycles, a change in morphology and composition of the In{sub 2}Se{sub 3} nanowire was observed and led to the device failure. The transmission electron microscopy and energy dispersive analysis indicate that electromigration causes the catastrophic failure by void formation where In atoms migrate toward the cathode and Se atoms migrate toward the anode depending on their electronegativities.
Authors:
 [1] ; ;  [2] ;  [3] ;  [1] ;  [4]
  1. Department of Electrical Engineering, Pohang University of Science and Technology, Pohang (Korea, Republic of)
  2. Creative IT Engineering, Pohang University of Science and Technology, Pohang (Korea, Republic of)
  3. NASA Ames Research Center, Moffett Field, California 94035 (United States)
  4. (Korea, Republic of)
Publication Date:
OSTI Identifier:
22253930
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ANODES; ATOMS; CURRENT DENSITY; DECOMPOSITION; ELECTRIC FIELDS; ELECTRONEGATIVITY; ELECTROPHORESIS; EQUIPMENT; FAILURES; INDIUM SELENIDES; MEMORY DEVICES; MORPHOLOGY; STRESSES; TRANSMISSION ELECTRON MICROSCOPY