Investigation of electromigration in In{sub 2}Se{sub 3} nanowire for phase change memory devices
- Department of Electrical Engineering, Pohang University of Science and Technology, Pohang (Korea, Republic of)
- Creative IT Engineering, Pohang University of Science and Technology, Pohang (Korea, Republic of)
- NASA Ames Research Center, Moffett Field, California 94035 (United States)
The decomposition of In{sub 2}Se{sub 3} nanowire phase change memory devices during current-driving operation was investigated. The devices were subjected to thermal/electrical stress with current density and electric field during the reset operation at 0.24–0.38 MA/cm{sup 2} and 5.3–6.4 kV/cm, respectively. After multiple operation cycles, a change in morphology and composition of the In{sub 2}Se{sub 3} nanowire was observed and led to the device failure. The transmission electron microscopy and energy dispersive analysis indicate that electromigration causes the catastrophic failure by void formation where In atoms migrate toward the cathode and Se atoms migrate toward the anode depending on their electronegativities.
- OSTI ID:
- 22253930
- Journal Information:
- Applied Physics Letters, Vol. 103, Issue 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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