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Title: Evolution of the conductivity type in germania by varying the stoichiometry

Information regarding the conductivity type of Si/GeO{sub x}/Ni structures with various stoichiometry has been obtained using experiments on injection of minority carriers from n- and p-type silicon. Results show that non-stoichiometric GeO{sub x} films exhibit bipolar conductivity, that is, holes as well as electrons contribute to the charge transport. Stoichiometric GeO{sub 2} films exhibit unipolar electron conductivity.
Authors:
 [1] ;  [2] ;  [1] ;  [3] ;  [4]
  1. A. V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk 630090 (Russian Federation)
  2. (Russian Federation)
  3. Department of Mechatronic Technology, National Taiwan Normal University, Taipei 106, Taiwan (China)
  4. National Chiao Tung University, Hsinchu 300, Taiwan (China)
Publication Date:
OSTI Identifier:
22253927
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARRIERS; CHARGE TRANSPORT; ELECTRONS; EVOLUTION; FILMS; GERMANATES; GERMANIUM OXIDES; HOLES; SILICON; STOICHIOMETRY