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Title: Towards rapid nanoscale measurement of strain in III-nitride heterostructures

We report the structural and compositional nanoscale characterization of InAlN/GaN nanoribbon-structured high electron mobility transistors (HEMTs) through the use of geometric phase analysis (GPA) and nanobeam electron diffraction (NBED). The strain distribution in the HEMT layer is quantified and compared to the expected strain profile for the nominal structure predicted by finite element analysis (FEA). Using the experimental strain results, the actual structure is determined and used to modify the FEA model. The improved fit of the model demonstrates that GPA and NBED provide a powerful platform for routine and rapid characterization of strain in III-V semiconducting device systems leading to insights into device evolution during processing and future device optimization.
Authors:
;  [1] ;  [2] ;  [3] ;  [2] ;  [4] ; ;  [5]
  1. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)
  2. CEA, LETI, Minatec Campus, 17 rue des martyrs, F38054 Grenoble (France)
  3. CEA, INAC, Minatec Campus, 17 rue des Martyrs, F38054 Grenoble (France)
  4. (France)
  5. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)
Publication Date:
OSTI Identifier:
22253922
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; COMPARATIVE EVALUATIONS; DISTRIBUTION; ELECTRON DIFFRACTION; ELECTRON MOBILITY; EQUIPMENT; EVOLUTION; FINITE ELEMENT METHOD; GALLIUM NITRIDES; LAYERS; NANOSTRUCTURES; OPTIMIZATION; PHASE STUDIES; STRAINS; TRANSISTORS