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Title: Carrier-number fluctuations in the 2-dimensional electron gas at the LaAlO{sub 3}/SrTiO{sub 3} interface

The voltage-spectral density S{sub V} (f) of the 2-dimensional electron gas formed at the interface of LaAlO{sub 3}/SrTiO{sub 3} has been thoroughly investigated. The low-frequency component has a clear 1/f behavior with a quadratic bias current dependence, attributed to resistance fluctuations. However, its temperature dependence is inconsistent with the classical Hooge model, based on carrier-mobility fluctuations. The experimental results are, instead, explained in terms of carrier-number fluctuations, due to an excitation-trapping mechanism of the 2-dimensional electron gas.
Authors:
; ;  [1] ; ; ;  [2] ; ;  [3]
  1. Dipartimento di Fisica “E. R. Caianiello” and CNR-SPIN Salerno, Università di Salerno, I-84084 Fisciano, Salerno (Italy)
  2. CNR-SPIN Napoli and Dipartimento di Fisica, Università di Napoli “Federico II,” I-80126 Napoli (Italy)
  3. CNR-SPIN Genova and Dipartimento di Fisica, Università di Genova, I-16152 Genova (Italy)
Publication Date:
OSTI Identifier:
22253920
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINATES; CARRIER MOBILITY; CARRIERS; ELECTRIC POTENTIAL; ELECTRON GAS; EXCITATION; FLUCTUATIONS; INTERFACES; LANTHANUM COMPOUNDS; SPECTRAL DENSITY; STRONTIUM TITANATES; TEMPERATURE DEPENDENCE