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Title: Barrier performance optimization of atomic layer deposited diffusion barriers for organic light emitting diodes using x-ray reflectivity investigations

The importance of O{sub 3} pulse duration for encapsulation of organic light emitting diodes (OLEDs) with ultra thin inorganic atomic layer deposited Al{sub 2}O{sub 3} layers is demonstrated for deposition temperatures of 50 °C. X-ray reflectivity (XRR) measurements show that O{sub 3} pulse durations longer than 15 s produce dense and thin Al{sub 2}O{sub 3} layers. Correspondingly, black spot growth is not observed in OLEDs encapsulated with such layers during 91 days of aging under ambient conditions. This implies that XRR can be used as a tool for process optimization of OLED encapsulation layers leading to devices with long lifetimes.
Authors:
;  [1] ; ; ;  [2] ; ; ; ;  [3] ;  [1] ;  [4]
  1. Nanoelectronics Materials Laboratory NaMLab gGmbH, Nöthnitzer Str. 64, 01187 Dresden (Germany)
  2. Dresden Innovation Center Energy Efficiency, Institut für Angewandte Photophysik, Technische Universität Dresden, 01062 Dresden (Germany)
  3. Institute of Semiconductor and Microsystems Technology, Technische Universität Dresden, 01187 Dresden (Germany)
  4. (Germany)
Publication Date:
OSTI Identifier:
22253906
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; DEPOSITION; DIFFUSION BARRIERS; LAYERS; LIGHT EMITTING DIODES; OPTIMIZATION; PERFORMANCE; REFLECTIVITY; X RADIATION