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Title: Barrier performance optimization of atomic layer deposited diffusion barriers for organic light emitting diodes using x-ray reflectivity investigations

Abstract

The importance of O{sub 3} pulse duration for encapsulation of organic light emitting diodes (OLEDs) with ultra thin inorganic atomic layer deposited Al{sub 2}O{sub 3} layers is demonstrated for deposition temperatures of 50 °C. X-ray reflectivity (XRR) measurements show that O{sub 3} pulse durations longer than 15 s produce dense and thin Al{sub 2}O{sub 3} layers. Correspondingly, black spot growth is not observed in OLEDs encapsulated with such layers during 91 days of aging under ambient conditions. This implies that XRR can be used as a tool for process optimization of OLED encapsulation layers leading to devices with long lifetimes.

Authors:
;  [1]; ; ;  [2]; ; ; ;  [3];  [1]
  1. Nanoelectronics Materials Laboratory NaMLab gGmbH, Nöthnitzer Str. 64, 01187 Dresden (Germany)
  2. Dresden Innovation Center Energy Efficiency, Institut für Angewandte Photophysik, Technische Universität Dresden, 01062 Dresden (Germany)
  3. Institute of Semiconductor and Microsystems Technology, Technische Universität Dresden, 01187 Dresden (Germany)
Publication Date:
OSTI Identifier:
22253906
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 103; Journal Issue: 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; DEPOSITION; DIFFUSION BARRIERS; LAYERS; LIGHT EMITTING DIODES; OPTIMIZATION; PERFORMANCE; REFLECTIVITY; X RADIATION

Citation Formats

Singh, Aarti, Schröder, Uwe, Klumbies, Hannes, Müller-Meskamp, Lars, Leo, Karl, Geidel, Marion, Knaut, Martin, Hoßbach, Christoph, Albert, Matthias, Mikolajick, Thomas, and Institute of Semiconductor and Microsystems Technology, Technische Universität Dresden, 01187 Dresden. Barrier performance optimization of atomic layer deposited diffusion barriers for organic light emitting diodes using x-ray reflectivity investigations. United States: N. p., 2013. Web. doi:10.1063/1.4839455.
Singh, Aarti, Schröder, Uwe, Klumbies, Hannes, Müller-Meskamp, Lars, Leo, Karl, Geidel, Marion, Knaut, Martin, Hoßbach, Christoph, Albert, Matthias, Mikolajick, Thomas, & Institute of Semiconductor and Microsystems Technology, Technische Universität Dresden, 01187 Dresden. Barrier performance optimization of atomic layer deposited diffusion barriers for organic light emitting diodes using x-ray reflectivity investigations. United States. https://doi.org/10.1063/1.4839455
Singh, Aarti, Schröder, Uwe, Klumbies, Hannes, Müller-Meskamp, Lars, Leo, Karl, Geidel, Marion, Knaut, Martin, Hoßbach, Christoph, Albert, Matthias, Mikolajick, Thomas, and Institute of Semiconductor and Microsystems Technology, Technische Universität Dresden, 01187 Dresden. 2013. "Barrier performance optimization of atomic layer deposited diffusion barriers for organic light emitting diodes using x-ray reflectivity investigations". United States. https://doi.org/10.1063/1.4839455.
@article{osti_22253906,
title = {Barrier performance optimization of atomic layer deposited diffusion barriers for organic light emitting diodes using x-ray reflectivity investigations},
author = {Singh, Aarti and Schröder, Uwe and Klumbies, Hannes and Müller-Meskamp, Lars and Leo, Karl and Geidel, Marion and Knaut, Martin and Hoßbach, Christoph and Albert, Matthias and Mikolajick, Thomas and Institute of Semiconductor and Microsystems Technology, Technische Universität Dresden, 01187 Dresden},
abstractNote = {The importance of O{sub 3} pulse duration for encapsulation of organic light emitting diodes (OLEDs) with ultra thin inorganic atomic layer deposited Al{sub 2}O{sub 3} layers is demonstrated for deposition temperatures of 50 °C. X-ray reflectivity (XRR) measurements show that O{sub 3} pulse durations longer than 15 s produce dense and thin Al{sub 2}O{sub 3} layers. Correspondingly, black spot growth is not observed in OLEDs encapsulated with such layers during 91 days of aging under ambient conditions. This implies that XRR can be used as a tool for process optimization of OLED encapsulation layers leading to devices with long lifetimes.},
doi = {10.1063/1.4839455},
url = {https://www.osti.gov/biblio/22253906}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 23,
volume = 103,
place = {United States},
year = {Mon Dec 02 00:00:00 EST 2013},
month = {Mon Dec 02 00:00:00 EST 2013}
}