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Title: Antiferromagnetic half-metals, gapless half-metals, and spin gapless semiconductors: The D0{sub 3}-type Heusler alloys

High-spin-polarization materials are desired for the realization of high-performance spintronic devices. We combine recent experimental and theoretical findings to theoretically design several high-spin-polarization materials in binary D0{sub 3}-type Heusler alloys: gapless (zero-gap) half-metallic ferrimagnets of V{sub 3}Si and V{sub 3}Ge, half-metallic antiferromagnets of Mn{sub 3}Al and Mn{sub 3}Ga, half-metallic ferrimagnets of Mn{sub 3}Si and Mn{sub 3}Ge, and a spin gapless semiconductor of Cr{sub 3}Al. The high spin polarization, zero net magnetic moment, zero energy gap, and slight disorder compared to the ternary and quaternary Heusler alloys make these binary materials promising candidates for spintronic applications. All results are obtained by the electronic structure calculations from first-principles.
Authors:
;  [1]
  1. School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China)
Publication Date:
OSTI Identifier:
22253903
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTIFERROMAGNETISM; DESIGN; ELECTRONIC STRUCTURE; ENERGY GAP; EQUIPMENT; HEUSLER ALLOYS; MAGNETIC MOMENTS; METALS; PERFORMANCE; SEMICONDUCTOR MATERIALS; SPIN ORIENTATION; VANADIUM SILICIDES