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Title: Compositional analysis of GaAs/AlGaAs heterostructures using quantitative scanning transmission electron microscopy

We demonstrate a method for compositional mapping of Al{sub x}Ga{sub 1–x}As heterostructures with high accuracy and unit cell spatial resolution using quantitative high angle annular dark field scanning transmission electron microscopy. The method is low dose relative to spectroscopic methods and insensitive to the effective source size and higher order lens aberrations. We apply the method to study the spatial variation in Al concentration in cross-sectioned GaAs/AlGaAs core-shell nanowires and quantify the concentration in the Al-rich radial band and the AlGaAs shell segments.
Authors:
;  [1] ; ;  [2] ; ;  [2] ;  [3] ;  [2] ;  [4] ; ;  [5]
  1. Department of Physics, Norwegian University of Science and Technology (NTNU), Trondheim (Norway)
  2. Monash Centre for Electron Microscopy, Monash University, VIC 3800 (Australia)
  3. (Australia)
  4. (Germany)
  5. Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU), Trondheim (Norway)
Publication Date:
OSTI Identifier:
22253900
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTROSCOPY; ACCURACY; ALUMINIUM ARSENIDES; CONCENTRATION RATIO; ECOLOGICAL CONCENTRATION; GALLIUM ARSENIDES; QUANTUM WIRES; RADIATION DOSES; SPATIAL RESOLUTION; TRANSMISSION ELECTRON MICROSCOPY; X-RAY SPECTROSCOPY