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Title: Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100 μA is found fixed at 487 nm (peak), 516 nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.
Authors:
; ;  [1] ;  [2] ; ;  [3] ;  [4]
  1. Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)
  2. (United States)
  3. Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)
  4. Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)
Publication Date:
OSTI Identifier:
22253897
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BACKSCATTERING; CRYSTALS; DIFFRACTION; ELECTROLUMINESCENCE; GALLIUM NITRIDES; LIGHT EMITTING DIODES; LINE DEFECTS; MICROSTRUCTURE; PIEZOELECTRICITY; QUANTUM WELLS; SUBSTRATES; SURFACE AREA; VAPOR PHASE EPITAXY; VISIBLE RADIATION