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Title: Ultrathin highly uniform Ni(Al) germanosilicide layer with modulated B8 type Ni{sub 5}(SiGe){sub 3} phase formed on strained Si{sub 1−x}Ge{sub x} layers

We present a method to form ultrathin highly uniform Ni(Al) germanosilicide layers on compressively strained Si{sub 1−x}Ge{sub x} substrates and their structural characteristics. The uniform Ni(Al) germanosilicide film is formed with Ni/Al alloy at an optimized temperature of 400 °C with an optimized Al atomic content of 20 at. %. We find only two kinds of grains in the layer. Both grains show orthogonal relationship with modified B8 type phase. The growth plane is identified to be (10-10)-type plane. After germanosilicidation the strain in the rest Si{sub 1−x}Ge{sub x} layer is conserved, which provides a great advantage for device application.
Authors:
;  [1] ;  [2] ;  [2] ;  [3] ; ; ; ; ; ; ; ;  [1] ; ;  [4]
  1. Peter Grünberg Institute 9, Forschungzentrum Jülich, 52425 Jülich (Germany)
  2. (China)
  3. Peter Grünberg Institute 5, Forschungszentrum Jülich, 52425 Jülich (Germany)
  4. State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, Shanghai 200050 (China)
Publication Date:
OSTI Identifier:
22253893
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; ALLOYS; BERYLLIUM 10; EQUIPMENT; FILMS; GERMANIUM SILICIDES; LAYERS; STRAINS; SUBSTRATES