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Title: GeSn-based p-i-n photodiodes with strained active layer on a Si wafer

We report an investigation of GeSn-based p-i-n photodiodes with an active GeSn layer that is almost fully strained. The results show that (a) the response of the Ge/GeSn/Ge heterojunction photodiodes is stronger than that of the reference Ge-based photodiodes at photon energies above the 0.8 eV direct bandgap of bulk Ge (<1.55 μm), and (b) the optical response extends to lower energy regions (1.55–1.80 μm wavelengths) as characterized by the strained GeSn bandgap. A cusp-like spectral characteristic is observed for samples with high Sn contents, which is attributed to the significant strain-induced energy splitting of heavy and light hole bands. This work represents a step forward in developing GeSn-based infrared photodetectors.
Authors:
; ; ; ;  [1] ;  [2] ; ;  [3]
  1. Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan (China)
  2. Department of Mechanical Engineering, and Advanced Institute of Manufacturing with High-tech Innovations, National Chung Cheng University, Chiayi County 62102, Taiwan (China)
  3. Department of Physics, University of Massachusetts Boston, Boston, Massachusetts 02125 (United States)
Publication Date:
OSTI Identifier:
22253892
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; CUSPED GEOMETRIES; EV RANGE; HETEROJUNCTIONS; HOLES; PHOTODETECTORS; PHOTODIODES; PHOTONS; STRAINS