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Title: Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes

We demonstrate a metalorganic chemical vapor deposition growth approach for inverting N-polar to Ga-polar GaN by using a thin inversion layer grown with high Mg flux. The introduction of this inversion layer allowed us to grow p-GaN films on N-polar GaN thin film. We have studied the dependence of hole concentration, surface morphology, and degree of polarity inversion for the inverted Ga-polar surface on the thickness of the inversion layer. We then use this approach to grow a light emitting diode structure which has the MQW active region grown on the advantageous N-polar surface and the p-layer grown on the inverted Ga-polar surface.
Authors:
; ;  [1] ; ;  [2]
  1. Department of Electrical and Computer Engineering, NCSU, Raleigh, North Carolina 27695 (United States)
  2. Department of Material Science and Engineering, NCSU, Raleigh, North Carolina 27695 (United States)
Publication Date:
OSTI Identifier:
22253889
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDES; HOLES; LAYERS; LIGHT EMITTING DIODES; QUANTUM WELLS; SURFACES; THICKNESS; THIN FILMS