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Title: Is it viable to improve light output efficiency by nano-light-emitting diodes?

Nanopillar arrays with InGaN/GaN multiple-quantum-disks (MQDs) are fabricated by focused-ion-beam milling with surface damage layer removed by KOH wet etching. Nano-light-emitting diodes (Nano-LEDs) made of the InGaN/GaN MQD nanopillars are found to have 19.49% less output power than that of a conventional LED. The reasons are analyzed in detail and considering their current-voltage and electroluminescence characteristics, internal quantum efficiency, external quantum efficiency, light extraction, and wall-plug efficiency. Our results suggest that nanopillar-LED can outperform if the density can be increased to 2.81 × 10{sup 9} cm{sup −2} with the size unchanged or the size can be increased to 854.4 nm with the density unchanged.
Authors:
;  [1] ;  [2] ;  [1] ;  [3] ;  [3]
  1. Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China)
  2. Genesis Photonics Incorporation, Tainan 70101, Taiwan (China)
  3. (China)
Publication Date:
OSTI Identifier:
22253880
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; GALLIUM NITRIDES; ION BEAMS; LIGHT EMITTING DIODES; MILLING; NANOSTRUCTURES; POTASSIUM HYDROXIDES; QUANTUM EFFICIENCY; VISIBLE RADIATION