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Title: Anomalous optical switching and thermal hysteresis during semiconductor-metal phase transition of VO{sub 2} films on Si substrate

We present a detailed infrared study of the semiconductor-to-metal transition (SMT) in a vanadium dioxide (VO{sub 2}) film deposited on silicon wafer. The VO{sub 2} phase transition is studied in the mid-infrared region by analyzing the transmittance and the reflectance measurements, and the calculated emissivity. The reflectance has been measured in two configurations: from the side of the VO{sub 2} film and from that of Si wafer. The results show a strong asymmetry between the emissivity in the two configurations, and the fact that the emissivity dynamic range from the silicon side is twice as large than that from the VO{sub 2} side. The temperature behaviour of the emissivity during the SMT put into evidence the phenomenon of the anomalous absorption in VO{sub 2}, which has been explained by applying the Maxwell Garnett effective medium approximation theory.
Authors:
; ; ;  [1]
  1. Dipartimento di Scienze di Base ed Applicate per l'Ingegneria, Sapienza Università di Roma, via A. Scarpa 16, 00161 Roma (Italy)
Publication Date:
OSTI Identifier:
22253872
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; EMISSIVITY; FILMS; METALS; PHASE TRANSFORMATIONS; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES; VANADIUM OXIDES