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Title: Dopant-induced random telegraph signal in nanoscale lateral silicon pn diodes at low temperatures

We studied current-voltage characteristics of nanoscale pn diodes having the junction formed in a laterally patterned ultrathin silicon-on-insulator layer. At temperatures below 30‚ÄČK, we observed random telegraph signal (RTS) in a range of forward bias. Since RTS is observed only for pn diodes, but not for pin diodes, one dopant among phosphorus donors or boron acceptors facing across the junction is likely responsible for potential changes affecting the current. Based also on potential measurements by low-temperature Kelvin probe force microscope, RTS is ascribed to trapping/detrapping of carriers by/from a single dopant near the farther edge of the depletion region.
Authors:
 [1] ;  [2] ;  [1] ;  [3] ; ; ;  [1] ;  [4] ;  [5]
  1. Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011 (Japan)
  2. (Indonesia)
  3. (Poland)
  4. Department of Electrical Engineering, University of Indonesia, Depok, 16424 Jakarta (Indonesia)
  5. Division of Sensors and Measuring Systems, Warsaw University of Technology, Sw. A. Boboli 8, 02-525 Warsaw (Poland)
Publication Date:
OSTI Identifier:
22253860
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; BORON; NANOSTRUCTURES; PHOSPHORUS; RANDOMNESS; SIGNALS; SILICON