Dopant-induced random telegraph signal in nanoscale lateral silicon pn diodes at low temperatures

Journal Article · Mon Dec 09 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4841735· OSTI ID:22253860

Purwiyanti, Sri ^[1]; Nowak, Roland ^[1]; Moraru, Daniel; Mizuno, Takeshi; Tabe, Michiharu ^[1]; Hartanto, Djoko ^[2]; Jablonski, Ryszard ^[3]

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1. Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011 (Japan)
2. Department of Electrical Engineering, University of Indonesia, Depok, 16424 Jakarta (Indonesia)
3. Division of Sensors and Measuring Systems, Warsaw University of Technology, Sw. A. Boboli 8, 02-525 Warsaw (Poland)

We studied current-voltage characteristics of nanoscale pn diodes having the junction formed in a laterally patterned ultrathin silicon-on-insulator layer. At temperatures below 30 K, we observed random telegraph signal (RTS) in a range of forward bias. Since RTS is observed only for pn diodes, but not for pin diodes, one dopant among phosphorus donors or boron acceptors facing across the junction is likely responsible for potential changes affecting the current. Based also on potential measurements by low-temperature Kelvin probe force microscope, RTS is ascribed to trapping/detrapping of carriers by/from a single dopant near the farther edge of the depletion region.

• OSTI ID: 22253860
• Journal Information: Applied Physics Letters, Vol. 103, Issue 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
BORON
NANOSTRUCTURES
PHOSPHORUS
RANDOMNESS
SIGNALS
SILICON