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Title: Excitonic fine-structure splitting in telecom-wavelength InAs/GaAs quantum dots: Statistical distribution and height-dependence

The variation of the excitonic fine-structure splitting is studied for semiconductor quantum dots under the influence of a strain-reducing layer, utilized to shift the emission wavelength of the excitonic transition into the telecom-wavelength regime of 1.3–1.5 μm. By means of a sp{sup 3}s{sup *}-tight-binding model and configuration interaction, we calculate wavelength shifts and fine-structure splittings for various quantum dot geometries. We find the splittings remaining small and even decreasing with strain-reducing layer composition for quantum dots with large height. Combined with an observed increased emission efficiency, the applicability for generation of entanglement photons is persistent.
Authors:
; ; ;  [1] ;  [2]
  1. Institute of Theoretical Physics, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen (Germany)
  2. College of Optical Sciences, University of Arizona, 1630 E. University Blvd., Tucson, Arizona 85721-0094 (United States)
Publication Date:
OSTI Identifier:
22253855
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CONFIGURATION INTERACTION; DISTRIBUTION; EFFICIENCY; EMISSION; FINE STRUCTURE; GALLIUM ARSENIDES; GEOMETRY; HEIGHT; INDIUM ARSENIDES; LAYERS; PHOTONS; QUANTUM DOTS; QUANTUM ENTANGLEMENT; SEMICONDUCTOR MATERIALS; STRAINS; WAVELENGTHS