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Title: Mode-locked red-emitting semiconductor disk laser with sub-250 fs pulses

We report on passive mode locking of a semiconductor disk laser emitting pulses shorter than 250 fs at 664 nm with a repetition frequency of 836 MHz. A fast saturable absorber mirror fabricated by metal-organic vapor-phase epitaxy in a near-resonant design was used to enable the mode locking operation. It includes two GaInP quantum wells located close to the surface and an additional fused silica coating. The emission spectrum shows the superposition of a soliton-like part and a smaller “continuum” part.
Authors:
; ; ; ;  [1]
  1. Institut für Halbleiteroptik und Funktionelle Grenzflächen and Research Center SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart (Germany)
Publication Date:
OSTI Identifier:
22253854
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DESIGN; EMISSION SPECTRA; LASERS; MIRRORS; MODE LOCKING; ORGANOMETALLIC COMPOUNDS; PULSES; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; SILICA; SOLITONS; SURFACES; VAPOR PHASE EPITAXY