skip to main content

SciTech ConnectSciTech Connect

Title: Electrical spin injection using GaCrN in a GaN based spin light emitting diode

We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ∼2.5% is obtained at 200 K.
Authors:
; ;  [1] ;  [2] ; ; ;  [1] ; ; ;  [3]
  1. Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India)
  2. (India)
  3. Department of Electrical and Computer Engineering, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)
Publication Date:
OSTI Identifier:
22253835
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRONS; GALLIUM NITRIDES; LIGHT EMITTING DIODES; MAGNETIC SEMICONDUCTORS; QUANTUM WELLS; SPIN; SPIN ORIENTATION; THIN FILMS