skip to main content

Title: Thermal creation of electron spin polarization in n-type silicon

Conversion of heat into a spin-current in electron doped silicon can offer a promising path for spin-caloritronics. Here, we create an electron spin polarization in the conduction band of n-type silicon by producing a temperature gradient across a ferromagnetic tunnel contact. The substrate heating experiments induce a large spin signal of 95 μV, corresponding to 0.54 meV spin-splitting in the conduction band of n-type silicon by Seebeck spin tunneling mechanism. The thermal origin of the spin injection has been confirmed by the quadratic scaling of the spin signal with the Joule heating current and linear dependence with the heating power.
Authors:
;  [1]
  1. Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg (Sweden)
Publication Date:
OSTI Identifier:
22253834
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DOPED MATERIALS; ELECTRONS; JOULE HEATING; SILICON; SPIN; SPIN ORIENTATION; TEMPERATURE GRADIENTS; TUNNEL EFFECT