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Title: A micrometer-size movable light emitting area in a resonant tunneling light emitting diode

We report on the fabrication of a micrometer-size movable light emitting area in a GaAs/AlAs quantum well resonant tunneling p-i-n diode. The spatial position of the micrometer-size light emitting area shifts linearly with increasing applied bias, up to 30 μm for a bias increment of 0.2 V. Also, the simultaneous resonant tunneling injection of both electrons and holes into the quantum well states is achieved at specific positions of the diode, thus resulting in a tenfold increase of the electroluminescence intensity.
Authors:
 [1] ;  [2] ; ; ; ;  [1] ; ;  [3]
  1. School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)
  2. (CNR), Institute for Photonics and Nanotechnologies (IFN-CNR), Via Cineto Romano 42, 00156 Roma (Italy)
  3. CNISM-Dipartimento di Fisica, Sapienza Università di Roma, P.le A. Moro 2, 00185 Roma (Italy)
Publication Date:
OSTI Identifier:
22253829
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; ELECTROLUMINESCENCE; FABRICATION; GALLIUM ARSENIDES; LIGHT EMITTING DIODES; QUANTUM WELLS; TUNNEL EFFECT